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Specification
Specification of Aluminum Nitride Substrates | ||||
Description | Aluminum nitride ceramic substrate has excellent thermal conductivity, lower dielectric constant and medium loss, reliable insulation performance, excellent mechanical properties, non-toxic, high temperature resistance, chemical corrosion. It is widely used in different areas such as communication devices, high brightness LEDs, and electronic electronic devices. It is an electronic ceramic material with excellent performance. | |||
Advantages | (1) It has a high thermal conductivity(>200w), which is 5-10 times than that of alumina ceramics. (2) The thermal expansion coefficient (4.3x10-6/℃) matches semiconductor silicon material (3.5-4.0x10-6/℃). (3) Good mechanical properties, bending strength higher than BEO ceramics, close to alumina. (4) Excellent electrical performance, high insulation resistance and low medium loss. (5) The circuit material is compatible with good compatibility, and multi-layer wiring can be performed to achieve the high density and miniaturization of the packaging. (6) Non-toxic, which is conducive to environmental protection. | |||
Materials Properties | C-ALN-200 | |||
Color | Grey and White | |||
Density | g/cm3 | ≥3.0 | ||
Surface Roughness Ra | μm | 0.300-0.600 | ||
Flexural Strength | MPa | >320 | ||
Camber | Length‰ | ≤2 | ||
Thermal Conductivity | 25℃, W/(m·k) | ≥200 | ||
Coefficient of Thermal Expansion | 10-6/K(40-400℃) | 4.0-5.0 | ||
10-6/K(40-800℃) | 3.5x10-6 | |||
Dielectric Constant | kv/MN | 17 | ||
Volume Resistance | 25℃,Ω·cm | ≥1014 | ||
Remarks: Above values are typical and not for specification. | ||||
Size | Thickness | Length*Width | ||
0.381mm | 50.8*50.8mm 110*110mm 114.3*114.3mm 120*120mm 127*127mm 139*190mm | |||
0.500mm | ||||
0.635mm | ||||
1.0mm | ||||
1.5mm | ||||
Applications | LED package | ![]() | ||
Power resistance ceramic base board | ![]() | |||
Ultra-power laser semiconductor LD | ![]() |
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