Zhuhai Cersol Technology Co, Ltd

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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
  • Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
  • Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
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Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small ...
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